Sub‐sampling of RF and THz waves using LT‐GaAs photoconductors under 1550 nm light excitation
| Autor: | J.-F. Lampin, F. Bavedila, R. Holzwarth, Stefano Barbieri, Guillaume Ducournau, M. Billet, W. Hansel, Emilien Peytavit, Y. Desmet |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Photoswitch business.industry Terahertz radiation Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology Laser 01 natural sciences Sub-sampling law.invention Gallium arsenide 010309 optics chemistry.chemical_compound Optics chemistry law 0103 physical sciences Optoelectronics Light excitation Radio frequency Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Electronics Letters. 53:1596-1598 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2017.2769 |
| Popis: | Low-temperature-grown GaAs (LT-GaAs)-based Fabry-Perot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub-sampling of continuous waves at frequencies up to 300 GHz is presented. The duty-cycle-limited conversion losses measured up to 67 GHz show that this GaAs-based photoconductor behaves as a nearly perfect photoswitch controlled by a 1550 nm pulsed laser. |
| Databáze: | OpenAIRE |
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