| Popis: |
In this work, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) which can switch the polarity without program gate (PG). In FeRFETs, the non-volatile and reconfigurable electrostatic doping by ferroelectric enables the type conversion without PG. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×1021 cm-3), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field (EC) is important to maximize the performance of FeRFETs. |
