High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence

Autor:	Yasuhiko Nomura, Minoru Sawada, Daijiro Inoue, Masayuki Shono, Ryoji Hiroyama
Rok vydání:	2002
Předmět:	Materials science Physics and Astronomy (miscellaneous) Aspect ratio Laser diode business.industry General Engineering General Physics and Astronomy Laser law.invention Power (physics) Optics law Perpendicular Optoelectronics business Beam (structure) Diode Beam divergence
Zdroj:	Japanese Journal of Applied Physics. 41:1154-1157
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.41.1154
Popis:	High-power 660-nm-band AlGaInP laser diodes with a small aspect ratio have been successfully fabricated with a window-mirror structure. The relationship between optical confinement in the perpendicular direction and internal loss was investigated, and a real index-guided structure with an AlInP current blocking layer was applied on the basis of this investigation. A high-power laser diode with a small aspect ratio of 1.65 for beam divergences of 16.5° and 10° in the perpendicular and parallel directions, respectively, has shown a high kink level of 160 mW and a high maximum light output power of 180 mW under pulsed condition. These laser diodes have operated stably for more than 1500 h with a light output power of 90 mW at 60°C under pulsed condition. Stable pulsed operation at 60°C with a high power of 90 mW and small aspect ratio of 1.65 have been simultaneously achieved for the first time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::07bcacc5be937dd557c15bd8101282e0 https://doi.org/10.1143/jjap.41.1154 Zobrazit plný text záznamu