Electronic Calibration of One-Port Networks at Submillimeter Wavelengths using Schottky Diodes as On-Wafer Standards

Autor:	Linli Xie, N. Scott Barker, Michael E. Cyberey, Robert M. Weikle, Souheil Nadri, Arthur W. Lichtenberger, Alexander Arsenovic, Matthew F. Bauwens
Rok vydání:	2019
Předmět:	010302 applied physics Materials science Silicon business.industry Schottky diode chemistry.chemical_element Port (circuit theory) 01 natural sciences chemistry 0103 physical sciences Calibration Optoelectronics Measurement uncertainty Wafer business Short circuit Diode
Zdroj:	2019 93rd ARFTG Microwave Measurement Conference (ARFTG).
DOI:	10.1109/arftg.2019.8739175
Popis:	An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those obtained from a conventional set of standards consisting of coplanar delayed short circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::07bb65f263e094b76ca6dc044adbf744 https://doi.org/10.1109/arftg.2019.8739175 Zobrazit plný text záznamu