Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions

Autor:	R. M. Abbasli, N. A. Aliyeva, F. T. Salmanov, R. M. Sardarly
Rok vydání:	2020
Předmět:	Permittivity Materials science Electrical resistivity and conductivity Analytical chemistry Relaxation (physics) Ionic conductivity Dissipation factor Dielectric loss Conductivity Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Solid solution
Zdroj:	Semiconductors. 54:615-622
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782620060159
Popis:	Charge transport in (TlGaSe2)1 –x(TlInS2)x solid solutions in the frequency range of 20–106 Hz before and after γ irradiation is studied using impedance-spectroscopy methods. The relaxation character of the permittivity dispersion and the nature of the dielectric loss are established. The frequency dependence of the dissipation factor tanδ in the crystals of the (TlGaSe2)1 –x(TlInS2)x solid solutions is caused not only by relaxation polarization, but also by reach-through conductivity. The relaxation times are found to be τ = 10–3 s. It is determined that, in the frequency range of 105–5 × 105 Hz, the electrical conductivity obeys the regularity σ ~ fS (0.1 ≤ S ≤ 1.0), which is indicative of the conductivity over localized states. It is shown that a further increase in the frequency leads to an increase in the ionic conductivity and transition of the system to the superionic state.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::07b67a7464f65da342724dcabaa9f1d2 https://doi.org/10.1134/s1063782620060159 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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