| Popis: |
In the present study, vacancy clusters in elongated Al–Mg and Al–Cu thin films (Mg/Cu concentration=0.05–1.70 at.%) were examined by electron microscopy. No dislocations were observed in these films. In Al–Mg thin films deformed at room temperature, a large number of stacking fault tetrahedra (sft) were observed alongside a few vacancy loops. The opposite was true for Al–Cu thin films, where well-grown loops predominated, and only a few sft were observed. The Al–Cu film results show that the majority of vacancies form loops larger than sft. We also deformed Al–0.05at.% (Mg or Cu) alloys in liquid nitrogen and cold-transferred to an electron microscope. In Al–Mg, a large number of dotted defects (possibly sft) were observed, while very few such defects were observed in Al–Cu. This indicates that loops observed in Al–Cu thin films deformed at room temperature, grew during/after deformation. The likely contribution of strain-induced vacancies in deformed Al thin films to the voiding in VLSI interconnect wires due to electro-migration were discussed. |
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