Current transport of GaAsSb-based DHBTs with different emitter structures
| Autor: | Y. C. Kao, Yue Ming Hsin, J. M. Kuo, Che ming Wang, H. J. Zhu, Chun ting Pan |
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| Rok vydání: | 2009 |
| Předmět: |
Gummel plot
Materials science business.industry Direct current Electrical engineering Heterojunction Electron Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Ternary compound Materials Chemistry Indium phosphide Optoelectronics Electrical and Electronic Engineering business Current density Common emitter |
| Zdroj: | Solid-State Electronics. 53:574-577 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2009.03.013 |
| Popis: | In this study, we compare our InAlAs–InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs–InP and InP–InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP–InAlAs interface blocks carriers and degrades the inject efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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