Cycle time and process improvement by single wafer thermal processing in production environment

Autor:	C.Y. Lu, C.W. Chou, K.C. Chen, S. Pam, H.H. Shih, C. Hsueh, H. Chung, S.S. Chen
Rok vydání:	2003
Předmět:	Materials science Silicon business.industry Dangling bond Oxide chemistry.chemical_element chemistry.chemical_compound Reliability (semiconductor) chemistry Rapid thermal processing Shallow trench isolation Optoelectronics Wafer Diffusion (business) business
Zdroj:	10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.
DOI:	10.1109/rtp.2002.1039457
Popis:	We have demonstrated that cycle time reduction, accelerated yield learning and product introduction can be achieved by single-wafer processing without a major impact on wafer production cost. The oxidation mechanism reveals that the ISSG oxide growth is diffusion controlled. Our results indicate the reliability of ISSG oxide is considerably improved as the process temperature increases with respect to charge-to-breakdown (Q/sub bd/). Such enhanced reliability of the ISSG oxide may be explained by the reduction of the dangling bonds as the oxidation temperature increases. In addition, the ISSG process improves the corner rounding of STI, which results in the elimination of the crystal defects in silicon.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0797b72aaccc14352845e4410a8a7baf https://doi.org/10.1109/rtp.2002.1039457 Zobrazit plný text záznamu