Evolution of film curvature profile during light-emitting diode epitaxial growth
| Autor: | Liu Jianpeng, Yan Dong, Shing Man Lee |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry General Chemical Engineering 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Curvature Epitaxy 01 natural sciences law.invention Optics law 0103 physical sciences Perpendicular Optoelectronics Wafer 0210 nano-technology business Instrumentation Layer (electronics) General Environmental Science Diode Light-emitting diode |
| Zdroj: | Instrumentation Science & Technology. 44:343-352 |
| ISSN: | 1525-6030 1073-9149 |
| DOI: | 10.1080/10739149.2016.1141783 |
| Popis: | Wafer bowing control is critical to improve epitaxial growth quality, especially for large wafers inside a metal–organic chemical vapor deposition reactor. An in-situ monitoring system was developed for real-time characterization of curvature mapping and epitaxial layer reflectance and temperature. Using deflectometry with parallel laser beams and position detector arrays, simultaneous curvature scans were conducted in two perpendicular directions over 4-in wafers. The developed system eliminated the effect of vibrations. Growth transients and curvature mappings are presented for the stages of epitaxial growth. Thermal and thickness gradient effects were analyzed to explain aspherical bowing. This technique appears suitable for closed-loop process optimization during light-emitting diode growth and other epitaxial growth processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
| Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |