Simulation and Comparison of Current-Voltage Characteristics in Double Gate Nanowire FET Using ZnO and SiO2 as Gate Oxide Materials
| Autor: | Rajagopal Reddy K, Cyril Robinson Azariah John Chelliah |
|---|---|
| Rok vydání: | 2022 |
| Zdroj: | ECS Transactions. 107:12811-12832 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | The aim of the project is to simulate and compare current-voltage characteristics in double gate nanowire field effect transistors made of ZnO and SiO2 gate oxides with thicknesses ranging from 1 to 30 nm. Materials and methods: The drain characteristics of double gate nanowire FET for the two gate oxides were considered for analysis. Altogether 147 drain current samples were considered for each group. Results: The two groups are subjected to an independent sample test using SPSS software, which calculates the significant mean value. The SPSS tool's chart builder is used to create a statistical graph. The mean for those in the highest quartile of drain current of ZnO based DG NW FET (drain current=0.461 mA, 95% CI:0.232-0.458 mA, p2 based DG NW FET (drain current=0.115 mA, 95% CI:0.232-0.458 mA, p2. The drain current is altered by varying the oxide thickness of the material. The drain current of ZnO is significantly higher than that of SiO2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|