The effect of FET soft turn-on on a Doherty amplifier
| Autor: | Karla J. I. Smith, Kimberley W. Eccleston, Peter T. Gough, Stephen I. Mann |
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| Rok vydání: | 2008 |
| Předmět: |
Engineering
FET amplifier business.industry RF power amplifier Electrical engineering Condensed Matter Physics Gate voltage Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Turn (geometry) Electrical and Electronic Engineering business Doherty amplifier Drain current Microwave |
| Zdroj: | Microwave and Optical Technology Letters. 50:1861-1864 |
| ISSN: | 1098-2760 0895-2477 |
| DOI: | 10.1002/mop.23477 |
| Popis: | A Doherty amplifier's theoretical gain and efficiency characteristics significantly exceed those achieved by practical simulations and implementations. Analysis and simulation demonstrates that the FET gate voltage to drain current transfer characteristic has a significant detrimental effect on these characteristics, indicating it is the major factor in the difference between ideal and practical results. © Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1861–1864, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23477 |
| Databáze: | OpenAIRE |
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