The Pile-Ups Of Aluminum And Boron In The Sige(C)

Autor: David Onsongo, Taras A. Kirichenko, Hong Jyh Li, Puneet Kohliand, Sanjay K. Banerjee
Rok vydání: 2002
Předmět:
Zdroj: MRS Proceedings. 737
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-737-f8.1
Popis: Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.
Databáze: OpenAIRE
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