Autor: |
Adrian Faigon, Sebastian Carbonetto, Mariano Garcia-Inza |
Rok vydání: |
2020 |
Předmět: |
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Zdroj: |
2020 Argentine Conference on Electronics (CAE). |
DOI: |
10.1109/cae48787.2020.9046369 |
Popis: |
In this paper we review the main aspects of MOS dosimetry. MOS dosimeters have been used for the last 50 years, and its performance has improved since then. To understand how a MOS dosimeter works its limitations and the different strategies to overcome them, it is important to overview the radiation effects in the MOS structure and how it can be used for dose estimation. Different reading methods are presented that improve some aspects of the performance of the MOS dosimeter, such as its lifespan or the temperature dependence of the dosimetric signal. Different well established MOS devices used for dosimetry are reviewed, pointing out its advantages and disadvantages. We finish with the description of some integrated circuits specially designed with the aim of outperform those MOS devices and incorporate more functionality to the dosimeter. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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