Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region
| Autor: | Xiaoyan Tang, Guan Nan Tang, Qing Wen Song, Yi Meng Zhang, Yi Men Zhang, Yuming Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 020208 electrical & electronic engineering Doping Extraction (chemistry) 02 engineering and technology Insulated-gate bipolar transistor Condensed Matter Physics 01 natural sciences Extractor Mechanics of Materials 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science business |
| Zdroj: | Materials Science Forum. 924:645-648 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.645 |
| Popis: | This paper proposes a new N-type 4H-SiC extraction-enhanced vertical insulated-gate bipolar transistor (E2VIGBT), which uses a partial Schottky contact to the collector region bottom surface as a carrier extractor to enhance the carrier extraction, so that the switching performance will be improved. TCAD simulation shows that, at an operation frequency of 250 kHz, the E2VIGBT offers a turn-off loss decrease of 69.2% and a total energy loss in a single period reduction of 34.4% when compared with conventional field-stop 4H-SiC IGBTs. With further specific optimization, the proposed structure consumes less energy in a much wider frequency range. The simulation results indicate that this new type of IGBT performs better in high frequency applications. |
| Databáze: | OpenAIRE |
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