Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

Autor:	G. Hill, F. Ranalli, Jie Bai, Tao Wang, R. J. Airey, Peter J. Parbrook, K. B. Lee
Rok vydání:	2009
Předmět:	business.industry Chemistry Electron Condensed Matter Physics Emission intensity law.invention Inorganic Chemistry Tunnel effect law Materials Chemistry Optoelectronics business Layer (electronics) Quantum well Quantum tunnelling Diode Light-emitting diode
Zdroj:	Journal of Crystal Growth. 311:2857-2859
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2009.01.030
Popis:	The effect of the AIGaN electron blocking layer (EBL) thickness on the electrical and optical properties of 310 nm AIGaN single quantum well (SQW) light-emitting diodes (LEDs) has been investigated. A large ideality factor extracted from the current-voltage (I-V) characteristics indicates that a tunneling mechanism dominates the carrier transport process in the LEDs. The ideality factor decreases with increasing EBL thickness suggesting that deep-level state assisted tunneling is reduced. In addition, the QW emission intensity is enhanced with the introduction of an EBL due to the reduction of electron overflow to the p-type layer. The QW emission intensity is sensitive to the EBL thickness. This is attributed to the reduction of electron tunneling to the p-type layer with an EBL.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0774388964dc68ccaaf5b4ad6e5e7527 https://doi.org/10.1016/j.jcrysgro.2009.01.030 Zobrazit plný text záznamu Full Text from ScienceDirect