Vertical Sidewall MoS2 Growth and Transistors
| Autor: | Connor J. McClellan, H.-S. Philip Wong, Ching-Hua Wang, Eric Pop, Andrew C. Yu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Transistor Oxide 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid law.invention chemistry.chemical_compound Semiconductor chemistry law 0103 physical sciences 0210 nano-technology business |
| Zdroj: | DRC |
| DOI: | 10.1109/drc46940.2019.9046476 |
| Popis: | We present novel growth of the two-dimensional (2D) semiconductor MoS 2 directly on oxide/Si sidewalls as deep as $3\ \mu \mathrm{m}$ , demonstrating the first vertical 2D transistors with $I_{\mathrm{o}\mathrm{n}}/I_{\mathrm{off}} > 10^{7}$ and $I_{\mathrm{o}\mathrm{n}}\approx 30\mu \mathrm{A}/\mu \mathrm{m}$ , showing promise for high-density memory selector applications. We also demonstrate direct growth on high-k AbO 3 , an important step towards realizing VLSI-compatible 2D transistors. Our results show that 2D semiconductors can be implemented on non-planar surfaces with amorphous dielectrics for 3D back-end-of-line (BEOL) integration and high-density vertical memory selectors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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