Comparison of Methods to Bias Fully Depleted SOI-Based MOSFET Nanoribbon pH Sensors
| Autor: | Yves J. Chabal, R. A. Chapman, H. J. Stiegler, Huang-Chun Wen, Eric M. Vogel, P. G. Fernandes, Oliver Seitz |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Subthreshold conduction business.industry Transistor Analytical chemistry Silicon on insulator Biasing Electrolyte Electronic Optical and Magnetic Materials law.invention Condensed Matter::Soft Condensed Matter law MOSFET Optoelectronics Field-effect transistor Electric potential Physics::Chemical Physics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 58:1752-1760 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | The potential and electric field boundary conditions for the Gouy-Chapman model of the electrolyte diffuse layer are used to properly couple the potentials in the silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor to the electrolyte. This analysis is possible because the active silicon channel is fully depleted. Both the subthreshold and linear regimes are simulated. An operation with electrolyte floating and bias applied to the substrate is compared with the other methods of biasing the sensor. |
| Databáze: | OpenAIRE |
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