An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling

Autor:	Laurent Clavelier, Lea Di Cioccio, Myriam Assous, Jerome Dechamp, Thomas Signamarcheix, Patrick Leduc, Rachid Taibi, Laurent Vandroux, Laurent Bally, Marc Zussy, Sophie Verrun, Francois de Crecy, Laurent-Luc Chapelon, D. Bouchu, Pierric Gueguen
Rok vydání:	2009
Předmět:	Materials science business.industry Wafer bonding Metallurgy Oxide Direct bonding Die (integrated circuit) chemistry.chemical_compound Die preparation chemistry Anodic bonding Optoelectronics Wafer business Wafer-level packaging
Zdroj:	3DIC
Popis:	An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low stress high deposition rate oxide is deposited to embed the dices. A final thinning is then done to recover a flat and smooth surface before the trough silicon vias
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::075f74f34c4fa4f5367c59879f00ad36 https://doi.org/10.1109/3dic.2009.5306534 Zobrazit plný text záznamu