Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions
| Autor: | Gregory Belenky, D. Wang, Seungyong Jung, D. Donetsky |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Solid-state physics business.industry Infrared Superlattice Trapping Carrier lifetime Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Modulation Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Excitation Power density |
| Zdroj: | Journal of Electronic Materials. 41:3027-3030 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-012-2216-1 |
| Popis: | Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers. |
| Databáze: | OpenAIRE |
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