Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures
Autor: | Nikolaus Gmeinwieser, Clemens Vierheilig, Ansgar Laubsch, Ulrich T. Schwarz, Berthold Hahn |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | physica status solidi c. 6 |
ISSN: | 1610-1642 1862-6351 |
DOI: | 10.1002/pssc.200880881 |
Popis: | The optical properties of Nitride-based quantum well devices are affected by internal fields, fluctuation of the composition of the quantum well and nonradiative recombination. In this paper, we present a method to separate these effects by optical spectroscopy and photocurrent measurements under varying applied bias. We observe long-range fluctuations both in the photoluminescence (PL) properties and the photocurrent, while fluctuations on the sub-mm length scale can only be observed in the PL. A comparison with simplified 1D calculations leads to the assumption, that the long-range fluctuations are caused by fluctuations of the quantum well width, while the short-range fluctuations are explained by a varying nonradiative recombination (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: | OpenAIRE |
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