Effect of temperature and illumination intensity on the formation of metastable states in a-Si:H

Autor:	N. N. Ormont, I. A. Kurova
Rok vydání:	2008
Předmět:	Condensed Matter::Materials Science Distribution function Chemistry Annealing (metallurgy) Metastability Thermal Atomic physics Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 42:439-442
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782608040118
Popis:	Nonmonotonic variation in the concentration of slow photoinduced metastable states and in the half-width of the distribution function for these states concerning their annealing times is observed in a-Si:H as temperature is increased in the range from 400 to 480 K. These nonmonotonic variations in the parameters of ensembles are determined by the temperature-dependent ratio between the rates of formation and annealing of the metastable states under study. It is also established that, as the film’s illumination intensity is decreased, a decrease in the concentration of metastable states and in the half-width of their annealing-time distribution sets in at higher temperatures. This behavior can be accounted for, in particular, by a substantial decrease in the rate of annealing of slow metastable states in comparison with a decrease in the rate of photoinduced formation of these states; according to the three-level model, this formation also involves a thermal process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0746dfd9ae807d8a632214fe50bd9539 https://doi.org/10.1134/s1063782608040118 Zobrazit plný text záznamu Plný text ve formátu PDF