Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors
| Autor: | Adrian Podpirka, Brian R. Bennett, Satvika L. Kumar, J.B. Boos |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Yield (engineering) business.industry Transistor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention Lattice constant law 0103 physical sciences Antimonide Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 45:2757-2762 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-temperature mobilities of 1000 cm2/V s to 1100 cm2/V s, with the surface-layer material influencing two-dimensional hole densities. The introduction of As into the barrier material allows a wider range of p-channel well/barrier combinations and lattice constants. These could be compatible with n-channel InGaAs wells for complementary field-effect transistor circuits which utilize a common buffer layer. InGaSb wells with thicknesses of 20 nm to 30 nm and compressive strains of 1.0% to 1.5% exhibited hole mobilities of 700 cm2/V s to 900 cm2/V s. |
| Databáze: | OpenAIRE |
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