Deep levels in Fe-doped InP

Autor: D. B. Kushev, A. S. Popov, N. N. Zheleva, L. A. Demberel
Rok vydání: 1979
Předmět:
Zdroj: Physica Status Solidi (a). 52:341-345
ISSN: 1521-396X
0031-8965
DOI: 10.1002/pssa.2210520138
Popis: The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. [Russian Text Ignored].
Databáze: OpenAIRE