Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP) 1(GaAs)n Quaternary Strained Short-Period Superlattices Grown on GaAs

Autor:	Kangsa Pak, Mikihiro Yokozeki, K. Samonji, Naoki Ohshima, Hiroo Yonezu, Yasufumi Takagi, Keiji Hayashida
Rok vydání:	1995
Předmět:	Materials science Reflection high-energy electron diffraction business.industry Superlattice General Engineering General Physics and Astronomy Crystallography Electron diffraction Transmission electron microscopy Lattice (order) Optoelectronics Dislocation Thin film business Molecular beam epitaxy
Zdroj:	Japanese Journal of Applied Physics. 34:L1442
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.34.l1442
Popis:	We investigated the growth mode and the dislocation generation process in the growth of (InP)1(GaAs)n quaternary strained short-period superlattice (SSPS) on GaAs(100) by reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM). The (InP)1(GaAs)n SSPSs with n of 2 and 3 were two-dimensionally grown even after the lattice relaxation. The generation of threading dislocations was suppressed by introducing the misfit dislocations at the hetero-interface.
Databáze:	OpenAIRE
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