| Autor: |
Sang-In Lee, Young-dae Kim, Yong Woo Hyung, Kab Jin Nam, Ki Yeon Park, Seok Jun Won, Young Wook Park, Moon Young Lee |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325). |
| DOI: |
10.1109/vlsit.1999.799358 |
| Popis: |
Capacitor manufacturing technology for 0.13 /spl mu/m design rule 1 Gbit DRAMs has been developed using an improved MIS (metal-insulator-semiconductor) tantalum oxide capacitor module process in a cylinder-shaped storage node with rugged-type inner surface (called inner cylinder). Capacitance of more than 26 fF/cell, leakage current of below 0.2 fA/cell at V/sub p/=1.0 V and breakdown lifetime of over 10 years were obtained as electrical properties, satisfying production level requirements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
