| Popis: |
A viable wafer-level 3D hyper-integration technology platform with dielectric adhesive bonding and copper vias has been described. An inter-wafer via-chain structure has been fabricated, demonstrating the feasibility of this 3D technology, with a baseline process flow of one-micron wafer-to-wafer alignment, BCB wafer bonding, three-step wafer thinning and copper damascene patterned inter-wafer interconnection. Evaluations indicate the thermal, mechanical, and electrical robustness of the baseline wafer bonding and thinning processes as well as compatibility with BEoL processes and packaging. The key advantages of BCB wafer bonding include the ability to accommodate wafer-level non-planarity (e.g., surface topography, wafer bow) and particulates at the bonding interfaces, high bond strength, and relatively low temperature bonding process as well as high temperature stability after bonding. |
