Effects of Long-Time Current Annealing to the Hysteresis in CVD Graphene on SiO2
| Autor: | Annika Kriisa, U. Kushan Wijewardena, Tharanga Nanayakkara, Ramesh Mani, Rasanga Samaraweera, Sajith Withanage |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Annealing (metallurgy) Refrigerator car chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Electron 010402 general chemistry 01 natural sciences law.invention law General Materials Science Cvd graphene business.industry Graphene Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics Copper 0104 chemical sciences chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business Cooling down |
| Zdroj: | MRS Advances. 4:3319-3326 |
| ISSN: | 2059-8521 |
| Popis: | Graphene specimens produced by chemical vapor deposition usually show p-type characteristics and significant hysteresis in ambient conditions. Among many methods, current annealing appears to be a better way of cleaning the sample due to the possibility of in-situ annealing in the measurement setup. However, long-time current annealing could increase defects in the underlying substrate. Studying the hysteresis with different anneal currents in a graphene device is, therefore, a topic of interest. In this experimental work, we investigate electron/hole transport in a graphene sample in the form of a Hall bar device with a back gate, where the graphene was prepared using chemical vapor deposition on copper foils. We study the hysteresis before and after current annealing the sample by cooling down to a temperature of 35 Kfrom room temperature with a back-gate bias in a closed cycle refrigerator. |
| Databáze: | OpenAIRE |
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