Microanalysis of wurtzite-GaN single crystals prepared by d.c. arc discharge
| Autor: | San Yu, Haibin Yang, Dongmei Li, Haiping Sun, Guangtian Zou, Hongdong Li |
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| Rok vydání: | 1996 |
| Předmět: |
Diffraction
Materials science Mechanical Engineering chemistry.chemical_element Gallium nitride Condensed Matter Physics Microanalysis Electric arc chemistry.chemical_compound Crystallography Lattice constant chemistry Mechanics of Materials General Materials Science Selected area diffraction Gallium Wurtzite crystal structure |
| Zdroj: | Materials Letters. 26:77-80 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/0167-577x(95)00201-4 |
| Popis: | Gallium nitride crystals with definite faces have been fabricated by d.c. arc discharge using gallium and H2 + NH3 as starting materials. Transmission electron microscope, selected area diffraction and X-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN having a wurtzite structure with lattice constants a 0 = 3.18 A and c 0 = 5.18 A . Both X-ray microanalysis and nano-probe diffraction techniques have been used to determine the composition and microstructure of the samples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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