Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
| Autor: | X. Li, Roger Malik, Craig L. Perkins, D. S. Albin, Gang Xiong, Jason M. Kephart, Markus Gloeckler, Mowafak Al-Jassim, Chun-Sheng Jiang, John Moseley, Wyatt K. Metzger, D. Lu, Mallick Rajni, Eric Colegrove, Darius Kuciauskas, Sachit Grover, W. Zhang |
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| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Dopant Renewable Energy Sustainability and the Environment business.industry Doping Energy Engineering and Power Technology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Cadmium telluride photovoltaics 0104 chemical sciences Electronic Optical and Magnetic Materials law.invention Fuel Technology Solar cell efficiency law Solar cell Energy level Optoelectronics 0210 nano-technology Energy source business |
| Zdroj: | Nature Energy. 4:837-845 |
| ISSN: | 2058-7546 |
| Popis: | CdTe-based solar technology has achieved one of the lowest levelized costs of electricity among all energy sources as well as state-of-the-art field stability. Yet, there is still ample headroom to improve. For decades, mainstream technology has combined fast CdTe deposition with a CdCl2 anneal and Cu doping. The resulting defect chemistry is strongly compensated and limits the useful hole density to ~1014 cm−3, creating a ceiling for fill factor, photovoltage and efficiency. In addition, Cu easily changes energy states and diffuses spatially, creating a risk of instabilities that must be managed with care. Here, we demonstrate a significant shift by doping polycrystalline CdSexTe1 − x and CdTe films with As while removing Cu entirely from the solar cell. The absorber majority-carrier density is increased by orders of magnitude to 1016–1017 cm−3 without compromising the lifetime, and is coupled with a high photocurrent greater than 30 mA cm−2. We demonstrate pathways for fast dopant incorporation in polycrystalline thin films, improved stability and 20.8% solar cell efficiency. CdTe solar cells have relied for decades on copper, which creates limited hole density, stability issues and a ceiling for voltage and efficiency. Now, Metzger et al. demonstrate As-doped Cu-free polycrystalline CdTe cells with enhanced hole density and dopant stability, achieving 20.8% efficiency. |
| Databáze: | OpenAIRE |
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