Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices
| Autor: | Gary A. Sevison, Andrew Sarangan, Mehdi Asheghi, Kenneth E. Goodson, Christopher Perez, Imad Agha, Evan M. Smith, Joshua R. Hendrickson, Pengfei Guo, Joshua A. Burrow, Heungdong Kwon |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Physics and Astronomy (miscellaneous) business.industry Contact resistance Doping chemistry.chemical_element 02 engineering and technology Tungsten 021001 nanoscience & nanotechnology 01 natural sciences Optical switch Amorphous solid Thermal conductivity chemistry Electrical resistivity and conductivity 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Physics Letters. 116:131901 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5142552 |
| Popis: | The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge 2 Sb 2 Te 5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 35 0 ° C, with a minimal impact on thermal conductivity. |
| Databáze: | OpenAIRE |
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