Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor*

Autor:	Ya-Mei Dou, Yang-Yan Guo, Fuhua Yang, Xiao-Di Zhang, Weihua Han, Xin-Yu Wu, Xiao-Song Zhao
Rok vydání:	2019
Předmět:	Electron mobility Materials science Silicon business.industry Scattering Transistor Doping Nanowire General Physics and Astronomy chemistry.chemical_element Junctionless nanowire transistor Semiconductor device law.invention chemistry law Optoelectronics business
Zdroj:	Chinese Physics B. 28:066804
ISSN:	1674-1056
DOI:	10.1088/1674-1056/28/6/066804
Popis:	We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0727da7de19803a58f10ff89d14c39d6 https://doi.org/10.1088/1674-1056/28/6/066804 Zobrazit plný text záznamu