Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility

Autor:	Alexander Gottwald, Frank Scholze, Vahid Mohammadi, Lin Qi, Wiebe de Boer, K. R. M. Mok, Udo Kroth, T.L.M. Scholtes, Negin Golshani, Lis K. Nanver, Amir Sammak
Rok vydání:	2014
Předmět:	Materials science business.industry Extreme ultraviolet lithography Detector Atomic and Molecular Physics and Optics Anode Photodiode law.invention Responsivity Optics CMOS law Ultraviolet light Optoelectronics Electrical and Electronic Engineering business Diode
Zdroj:	IEEE Journal of Selected Topics in Quantum Electronics. 20:306-316
ISSN:	1558-4542 1077-260X
DOI:	10.1109/jstqe.2014.2319582
Popis:	This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::07252f1920d8570c10297eb91cfe6502 https://doi.org/10.1109/jstqe.2014.2319582 Zobrazit plný text záznamu