Initial stage of the Bi surfactant-mediated growth of Ge on Si(111): a structural study

Autor:	Thomas J. Schmidt, Jens Falta, Gerhard Materlik
Rok vydání:	2000
Předmět:	Superstructure General Physics and Astronomy chemistry.chemical_element Mineralogy Germanium Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Bismuth Bond length Crystallography Adsorption chemistry Covalent radius Monolayer Deposition (law)
Zdroj:	Applied Surface Science. 166:399-405
ISSN:	0169-4332
DOI:	10.1016/s0169-4332(00)00456-6
Popis:	We have used Bi as a surfactant in Ge growth on Si(111) and present a detailed analysis of the adsorption site geometry of Bi on bare Si(111) as well as on ultrathin Ge films (1–2 monolayers, ML) grown on Bi-terminated Si(111). X-ray standing waves (XSWs) have been employed to show that at a growth temperature of 485°C, Bi occupies T 1 adsorption sites on Si(111). After Ge deposition, a site exchange of Ge and Bi is observed, and Bi is found to reside on T 1 sites on top of the pseudomorphically strained Ge. The SiBi and the GeBi bond lengths have been determined to be very close to the sum of the respective covalent radii.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::071a417dcfb8ca37e05221ecca654cde https://doi.org/10.1016/s0169-4332(00)00456-6 Zobrazit plný text záznamu Full Text from ScienceDirect