Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Structures
Autor: | Theodore J. Letavic, E. W. Maby, Ronald J. Gutmann |
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Rok vydání: | 1988 |
Předmět: | |
Zdroj: | MRS Proceedings. 130 |
ISSN: | 1946-4274 0272-9172 |
DOI: | 10.1557/proc-130-327 |
Popis: | A high-temperature viscoelastic stress relief technique has been investigated as a means for reducing in-plane stress encountered during zone-melt recrystallization of patterned silicon-on-insulator structures. This technique incorporates a phosphosilicate glass layer between the silicon film and the insulating substrate to provide a viscous flow mechanism for stress relief within the composite structure. The stress relaxation can bequalitatively described by a mechanical model which couples thermal expansion and viscoelastic flow. The model predicts the time constant for stress relief at high temperatures as a function of pattern size, and the results are useful as a design aid for zone-melt recrystallization experiments. |
Databáze: | OpenAIRE |
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