Role of dopants in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P detectors
| Autor: | A. Moussavi zarandi, Hossein Afarideh, S. Shahmaleki, Kh. Mohammadi |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Dopant Doping Analytical chemistry Crystal structure Activation energy Electronic structure Condensed Matter Physics Electronic Optical and Magnetic Materials Inorganic Chemistry Crystal Lattice constant Impurity Materials Chemistry Ceramics and Composites Physical and Theoretical Chemistry Atomic physics |
| Zdroj: | Journal of Solid State Chemistry. 202:282-290 |
| ISSN: | 0022-4596 |
| DOI: | 10.1016/j.jssc.2013.02.036 |
| Popis: | In this study, electronic structure of LiF crystal doped with Mg,Cu,P impurities was studied with WIEN2k code on the basis of FPLAPW+lo method. Results show that in Mg-doped LiF composition, an electronic trap was created with impurity concentration of 1.56% and 3.125%. In this condition, the electronic trap with increasing the percentage of the impurities up to 4.687% is annihilated. It was found, that by doping of Mg and Cu or P simultaneously, a hole-trap is created in valence band. It was realized that in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P, Cu impurity and Li atom, have a key role in creation of levels which lead to create electronic and hole traps. Mg impurity and F atom, only have a role in creation of electronic traps. In addition, P impurity has a main role in creation of the electronic and hole traps in LiF:Mg,Cu,P. The activation energy of electronic and hole trap in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P crystalline lattice were obtained as 0.3 and 5.5 eV, 0.92 and 3.4 eV and 0.75 and 3.1 eV, respectively. |
| Databáze: | OpenAIRE |
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