Edge-defined self-alignment of submicrometer overlaid devices
| Autor: | T.D. Bonifield, Satwinder Malhi, D.E. Carter, D.J. Coleman, Pallab K. Chatterjee, R.F. Pinizzotto, J.E. Leiss |
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| Rok vydání: | 1984 |
| Předmět: |
Materials science
Channel (digital image) business.industry Edge (geometry) Dissipation Electronic Optical and Magnetic Materials Read-write memory CMOS Etching (microfabrication) Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Static random-access memory Electrical and Electronic Engineering business Lithography |
| Zdroj: | IEEE Electron Device Letters. 5:428-429 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1984.25973 |
| Popis: | A novel device structure for self-aligning the overlaid device in a stacked CMOS process is introduced and demonstrated. The structure allows submicrometer channel length devices to be fabricated without using advanced lithographic technology. The self-alignment feature should permit a dense layout for CMOS static RAM applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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