Capacitive humidity sensitivity of SnO 2 :Sn thin film grown on silicon nanoporous pillar array
| Autor: | Li Ping Kang, Xinjian Li, Ling Li Wang, Zhen Ping Chen, Haiyan Wang |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Capacitive sensing chemistry.chemical_element Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences Sputtering Materials Chemistry Relative humidity Electrical and Electronic Engineering Thin film Composite material Instrumentation Nanoporous Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electrode 0210 nano-technology |
| Zdroj: | Sensors and Actuators B: Chemical. 229:513-519 |
| ISSN: | 0925-4005 |
| Popis: | A SnO 2 :Sn composite thin film was grown on silicon nanoporous pillar array (Si-NPA) by a vapor–liquid–solid growth method. The main phase of the film is rutile SnO 2 , with the amount of Sn can be changed through controlling the oxidation time. A capacitive humidity sensor was fabricated through sputtering coplanar interdigital silver electrodes onto SnO 2 :Sn/Si-NPA and its room-temperature humidity-sensing properties were studied at 25 °C. The SnO 2 :Sn/Si-NPA sensor prepared with an oxidation time of 30 min shows superior humidity-sensing properties. A humidity response over 265% was obtained in the relative humidity (RH) range of 11–95% at 1 kHz. The response and recovery times were determined to be ∼20 s and the maximum hysteresis was ∼2% at 75% RH. The sensor shows high measurement reproducibility, long-term stability and good selectivity. These results indicated that SnO 2 :Sn/Si-NPA might be a promising candidate for fabricating practical humidity sensor. |
| Databáze: | OpenAIRE |
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