Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells
| Autor: | Harold Dekkers, Annika Zuschlag, Tonio Buonassisi, Emanuele Cornagliotti, Gabriel Micard, David P. Fenning, Giso Hahn, Gianluca Coletti, Steve Hudelson, Bonna Newman, Barry Lai, Mariana I. Bertoni |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment business.industry Metallurgy chemistry.chemical_element Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Etching (microfabrication) Solar cell Silicide Optoelectronics Grain boundary Electrical and Electronic Engineering business Recombination Electron backscatter diffraction |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 19:187-191 |
| ISSN: | 1062-7995 |
| Popis: | We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiNx-coated stripes using laser-beam-induced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate pre- and post-hydrogenation recombination activity with GB character, density of iron-silicide nanoprecipitates, and dislocations. A strong correlation was found between GB recombination activity and the nature/density of etch pits along the boundaries, while iron silicide precipitates above detection limits were found to play a less significant role. Copyright © 2010 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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