A passively mode-locked semiconductor diode laser with a ring cavity

Autor:	P. Langlois, L. Desbiens, A. Yesayan, Michel Piché
Rok vydání:	2002
Předmět:	Optical amplifier Materials science business.industry Physics::Optics Injection seeder Semiconductor laser theory Vertical-cavity surface-emitting laser Gain-switching Optics Laser diode rate equations Optoelectronics Semiconductor optical gain business Step recovery diode
Zdroj:	Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505).
DOI:	10.1109/cleoe.2000.909931
Popis:	Summary form only given. Mode-locked semiconductor diode lasers are compact and simple sources of short optical pulses that are well suited for a number of applications. In this paper we present our experimental results showing that picosecond pulses have been reliably generated with a semiconductor diode laser operated with a ring cavity. An angle etched travelling-wave amplifier (InGaAs) designed to be operated at 860 nm was used as the active medium. The mode-locked operation was purely passive and it produced an average power of 3 mW per beam.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06ee08f3d58e2c1353db839367370505 https://doi.org/10.1109/cleoe.2000.909931 Zobrazit plný text záznamu