Photoenhanced CVD of hydrogenated amorphous silicon using an internal hydrogen discharge lamp
| Autor: | F. J. Clough, SD Baker, Paul Robertson, William I. Milne, S. C. Deane |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Amorphous silicon
Gas-discharge lamp Materials science Hydrogen business.industry Band gap Photoconductivity General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Chemical vapor deposition Conductivity Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition law Optoelectronics business |
| Zdroj: | Applied Surface Science. 43:277-284 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(89)90225-0 |
| Popis: | This paper reviews the production of a-Si:H by photo-enhanced chemical vapour deposition using a novel windowless, internal hydrogen discharge lamp. The absence of highly charged species bombarding the film surface in the photoCVD process means that we have the potential to produce material with a lower defect state density and cleaner interfaces. Our technique avoids the problems of mercury contamination and window fogging. High quality a-Si:H has been produced at a growth rate of 4 A/s, with an optical bandgap of 1.75 eV, dark conductivity of 10-10-10-11 S/cm and AM1 conductivity of 10-4 S/cm, giving a photoconductivity ratio of 6–7 orders. We are currently investigating the manufacture of TFTs using our photoCVD produced material to compare their performance with more conventionally produced PECVD devices. |
| Databáze: | OpenAIRE |
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