Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm

Autor: N. I. Iakovleva, P. A. Vaganova
Rok vydání: 2021
Předmět:
Zdroj: Journal of Communications Technology and Electronics. 66:1096-1102
ISSN: 1555-6557
1064-2269
DOI: 10.1134/s1064226921090175
Popis: In the study, a new рBn-architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of III‒V group materials with an n-type AlAsSb barrier layer, an n-type InAsSb absorption layer, and a р-type GaAsSb collector layer, designed for detection of radiation in the mid-wavelength infrared range of 3.1–4.2 µm has been developed and investigated. The proposed structure has no valence band offset, which enables operation in a wide bias voltage range without depletion of the base n-type InAsSb active layer. The barrier in the conduction band, due to the presence of a wide-gap AlAsSb layer in the structure, is ∼1.0 eV, which is sufficient to eliminate the electron current component. The dark currents and performance of the рBn-structure have been analyzed, with the result that, at an operating temperature of Т ≈ 150 K and dark current density of J ≤ 6 × 10–10 A/cm2, the detectivity value reaches D* ≥ 2.5 × 1012 (cm W–1 Hz1/2).
Databáze: OpenAIRE
Externí odkaz: