Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
| Autor: | P. Fischer, Kenzo Maehashi, Takehiro Nishida, Jürgen Christen, Hisao Nakashima, Takehiko Kato, Dieter Bimberg, Marius Grundmann, Koichi Inoue, T. Takeuchi, Yoshiji Inoue |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Photoluminescence Condensed matter physics Mechanical Engineering Cathodoluminescence Spectral shift Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Materials Science Mechanics of Materials Modulation Step edges General Materials Science Quantum Vicinal Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 51:229-232 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(97)00266-3 |
| Popis: | GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect