Autor: |
Yong-li Zang, Chuan-fu Cheng, Gong-xiang Wei, Xiao-Ling Fan, Jiao Li, Yun-yan Liu |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
Materials Letters. 63:2597-2599 |
ISSN: |
0167-577X |
Popis: |
The ZnO films are deposited on flexible substrate Teflon by radio frequency (RF) magnetron sputtering. The structure and residual stress of the films are revealed by XRD analysis. We find that the increase of RF power results in the change in the nature of stress and the difference of the grain size in the ZnO films on Teflon substrate. This indicates the possibility of the stress relaxation by increasing the RF power. Considering the (002) orientation and the mechanical stress, we suggest that the ZnO film deposited at RF power of 200 W for 1 h is optimal. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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