Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

Autor:	Cor Claeys, Suguru Funasaki, Kenichiro Takakura, Hidenori Ohyama, Daisuke Takeuchi, Eddy Simoen, Mutsuo Shibuya, Isao Tsunoda, Toshiyuki Nakashima, Katsuya Murakami
Rok vydání:	2012
Předmět:	Materials science Silicon Doping Analytical chemistry chemistry.chemical_element Sputter deposition Condensed Matter Physics Electronic Optical and Magnetic Materials X-ray photoelectron spectroscopy chemistry Sputtering Electrode Electrical and Electronic Engineering Gallium Spectroscopy
Zdroj:	Physica B: Condensed Matter. 407:2900-2902
ISSN:	0921-4526
DOI:	10.1016/j.physb.2011.08.061
Popis:	A transparent electrode of Si doped β-Ga2O3 films for solar cells, flat panel displays and other devices, which consists of chemically abundant and ecological friendly elements of gallium and oxygen, was grown on silicon substrates by RF magnetron sputtering using sintered Ga2O3 and Si target. The Si composition in the β-Ga2O3 film is determined by electron dispersive X-ray spectroscopy. The X-ray photoelectron spectroscopy peak ratio of oxygen over gallium decreases with increasing Si content. It is concluded that Si substitutes for the Ga sites in the β-Ga2O3 film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06cbbf439bc07cd2cd6190be8e45a92c https://doi.org/10.1016/j.physb.2011.08.061 Zobrazit plný text záznamu Full Text from ScienceDirect