Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure
| Autor: | Sergey A. Dvoretsky, Nikolay N. Mikhailov, S. M. Podgornykh, G. I. Harus, M. V. Yakunin, Yurii G. Arapov, V. N. Neverov, M. R. Popov, N. G. Shelushinina, S. V. Gudina |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Physics Condensed matter physics Thermal Hall effect Heterojunction Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics 01 natural sciences Variable-range hopping Atomic and Molecular Physics and Optics Magnetic field Quantum spin Hall effect Electrical resistivity and conductivity 0103 physical sciences General Materials Science 010306 general physics Quantum well |
| Zdroj: | Journal of Low Temperature Physics. 185:665-672 |
| ISSN: | 1573-7357 0022-2291 |
| DOI: | 10.1007/s10909-016-1477-0 |
| Popis: | We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures $$T =(2.9\div 50)$$ K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices. |
| Databáze: | OpenAIRE |
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