Band Gap Reduction in InAsN Alloys
| Autor: | Ding Kang Shih, Tso Yu Chu, Hao-Hsiung Lin, Li Wei Sung, Tzuen-Rong Yang |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 42:375-383 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.42.375 |
| Popis: | We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein–Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the `real' band-gap energy of InAsN samples, the energy shift due to the Burstein–Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the `real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model. |
| Databáze: | OpenAIRE |
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