Temperature and Annealing Effects on Photoluminescence Spectra of (InAs)1/(GaP)2 Superlattices Grown by Solid-Source Molecular Beam Epitaxy
| Autor: | Yi Cheng Cheng, Kai-Feng Huang, Sien Chi, Shu–Tsun Chou |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Photoluminescence
Materials science Condensed Matter::Other business.industry Annealing (metallurgy) Superlattice General Engineering Analytical chemistry General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Condensed Matter::Materials Science Wavelength Optoelectronics Thermal stability business Quantum well Molecular beam epitaxy |
| Zdroj: | Japanese Journal of Applied Physics. 39:L968 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.39.l968 |
| Popis: | Anomalous variation of photoluminescence (PL) wavelengths with temperature was observed in (InAs)1/(GaP)2 short-period-superlattice (SPS) quantum wells grown by solid-source molecular beam epitaxy with different phosphorus and arsenic cracker temperatures. We believed that the anomalous PL behavior could be attributed to the multi-axial strain effect existed at the abrupt InAs and GaP interfaces in the SPS structure. After rapid thermal anneal (RTA) treatment, the anomalous PL spectra in the low temperature region disappeared but the high temperature PL characteristics remained, which revealed the thermal stability of the (InAs)1/(GaP)2 quantum well structures and its potential in replacing InGaAsP quaternary. |
| Databáze: | OpenAIRE |
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