Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
| Autor: | Martin Pfost, Alberto Castellazzi, Thorsten Oeder |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Electrical Failure High-electron-mobility transistor Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Safe operating area 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Short circuit Failure mode and effects analysis |
| Zdroj: | Microelectronics Reliability. :321-326 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.06.046 |
| Popis: | A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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