Cu/sub x/S-(Cd,Zn)S photovoltaic solar energy converters. Quarterly report No. 2, July--September 1977

Autor:	B. L. Chin, T. M. Peterson, J. Washburn, K. Seshan
Rok vydání:	1977
Předmět:	Surface coating Materials science Fabrication Transmission electron microscopy law Impurity Inorganic chemistry Analytical chemistry Electron microscope Layer (electronics) Deposition (law) Quantum tunnelling law.invention
DOI:	10.2172/7152689
Popis:	Reproducible growth of uncracked, >10 ..mu..m thick films of (Cd,Zn)S has been accomplished on the As(antis 111) face of GaAs substrates and on substrates tilted approximately 14/sup 0/ off of (antis 111). Modifications to the hot wall deposition apparatus have been made to eliminate the trace impurities which had been sometimes found at the perimeter of the films. Techniques for transmission electron microscope specimen preparation have been developed. The initial TEM results have yielded evidence supporting the earlier proposed mechanism of Ga-face film cracking by an interfacial layer of GaS. The spectral response portion of the new device measurement apparatus is operational. The elastic tunneling calculations have been found to agree with experimental results reported by other workers for I-V characteristics of illuminated cells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::06af145c303b79e5e8b4700348491542 https://doi.org/10.2172/7152689 Zobrazit plný text záznamu