Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers
| Autor: | A. Vapaille, J.C. Dupuy, H. Charki, N. Djebbar, J. Gutierrez, G. Prudon |
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| Rok vydání: | 1990 |
| Předmět: |
inorganic chemicals
Electron mobility Materials science Resolution (mass spectrometry) Silicon Doping technology industry and agriculture Metals and Alloys Analytical chemistry chemistry.chemical_element social sciences Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Condensed Matter::Materials Science Low energy chemistry Condensed Matter::Superconductivity Materials Chemistry lipids (amino acids peptides and proteins) Condensed Matter::Strongly Correlated Electrons human activities Arsenic Molecular beam epitaxy |
| Zdroj: | Thin Solid Films. 184:37-45 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(90)90395-t |
| Popis: | Molecular beam epitaxy layers doped by low-energy implantation of arsenic —either during growth or during interruptions of growth (δ-doped layers)— have been characterized with respect to incorporation probability and electrical activity of the implanted arsenic, electron mobility and steepness of the doping profiles. Results show that (1) even at low implantation energy, incorporation probability is equal to unity and all the arsenic atoms are electrically active, (2) bulk mobility is obtained in layers doped during growthj and an interesting mobility enhancement is observed in δ-doped layers and (3) steepness of the doping profiles obtained is beyond the depth resolution of secondary ion mass spectrometry. Simulations of doping profiles indicate that doping gradients of 20 A per decade should be expected. |
| Databáze: | OpenAIRE |
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